| PART |
Description |
Maker |
| M67727 67727 |
144-148MHz /12.5V /60W / SSB MOBILE RADIO
144-148MHz,12.5V,60W, SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67798LRA |
RF POWER MODULE 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| VSC3144 |
6.5 Gbps 144 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation.
|
| VSC3040 |
11 Gbps 144 × 144 Asynchronous Crosspoint Switch
11 Gbps 144 】 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation
|
| APT10M11JVFR |
Power FREDFET; Package: ISOTOP®; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| UPD16664 |
144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM 144/160/184/208-OUTPUT液晶柱段驱动与RAM
|
NEC, Corp.
|
| AT25F2048 AT25F2048N AT25F2048N-10SU-2.7 |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
SPI Serial Memory 2M (262,144 x 8)
SPI Serial Memory 2M (262/144 x 8)
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
| M3H71FAD-R M3H15TDD M3H52TCD-R MH75FBD MH75FAG MH7 |
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
16-bit, 75 MIPS, 2.5v, 2 serial ports, host port, 80 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 20KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
16-Bit, 75 MIPS, 2.5V, 2 Serial Ports, Host Port, 40 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: 576 ball SBGA; No of Pins: 576; Temperature Range: Ind
300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 625 ball BGA; No of Pins: 625; Temperature Range: Ind
500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: BGA THERM ENH W/ HEATSINK; No of Pins: 576; Temperature Range: Ind
300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 484 ball BGA; No of Pins: 484; Temperature Range: Ind
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
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MTRONPTI
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